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NCV8605MNADJT2G onsemi

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NCV8605MNADJT2G onsemi

Here is the English description of the NCV8605MNADJT2G chip:

  • Function: Dual N-Channel Power MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current per Channel: 6A
  • On-Resistance per Channel: 16mΩ (max)
  • Operating Temperature: -40°C to 150°C
  • Package: Power SO-16

The NCV8605MNADJT2G is a dual N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Integrated dual switch capable of 6A per channel
  • Industry-leading low 16mΩ RDS(on) for high efficiency
  • Extended temperature range of -40°C to 150°C
  • Power SO-16 package increases I/O pincount

Common Applications:

  • Synchronous buck converters and switch mode power supplies
  • Dual channel motor/load drivers up to 6A per channel
  • Automotive/industrial equipment requiring rugged operation

Benefits include a dual high current switch solution optimized for reliability in demanding environments.

Well-suited for applications requiring independent switching of 6A loads across two channels under temperature extremes.

In summary, the NCV8605MNADJT2G provides robust 6A dual channel switching in an extended temperature range package.

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